In the given common emitter transistor circuit,the base current is $I_B = 40 \, \mu A$. Determine the base-emitter voltage $V_{BE}$. (in $, V$)

Given below are two statements:
Statement $I:$ In a typical transistor,all three regions emitter,base and collector have same doping level.
Statement $II:$ In a transistor,collector is the thickest and base is the thinnest segment.
In the light of the above statements,choose the most appropriate answer from the options given below.

For a transistor,if the emitter current $I_E = 25 \, mA$ and the base current $I_B = 1 \, mA$,what is the ratio of the collector current $I_C$ to the emitter current $I_E$?

The typical transfer characteristic of a transistor in $CE$ configuration is shown in the figure. $A$ load resistor of $2\,k\Omega$ is connected in the collector branch of the circuit used. The input resistance of the transistor is $0.50\,k\Omega$. The voltage gain of the transistor is:

In a transistor,in common emitter configuration,the ratio of power gain to voltage gain is

$A$ transistor having a $\beta$ equal to $80$ has a change in base current of $250 \mu A$. What is the change in collector current?